Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Abstract: This paper presents a novel all-SiC-based four-level active neutral-point-clamped (ANPC) power module utilizing high-performance 1700V/45mΩ and 900V/30mΩ SiC MOSFETs. The module exhibits ...
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