Abstract: Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) continue to play a critical role in radio frequency (RF) applications. Precise characterization of GaN HEMTs under realistic ...
Abstract: To better design AI processors, it is critical to characterize artificial intelligence (AI) workloads and contrast them to normal personal computer (PC) workloads. In this work, we profiled ...
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