High Resistance and Low Variation 8Kb SOT-MRAM Compute-in-Memory Array Based on 1T-1R Cell Structure
Abstract: Nonvolatile memories (NVMs) have emerged as promising candidates for efficient analog compute-in-memory (CIM). However, high power consumption and large variations in NVMs are key factors ...
Abstract: This study investigates the characteristics, sensitive regions, failure mechanism, and quantitative model of the SRAM soft errors caused by spacecraft charging-induced electrostatic ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback