Abstract: Owing to their inherent isolation and high noise-immunity, optically controlled gate drivers are desirable for deriving disruptive technologies for high-voltage, high-frequency, and ...
Abstract: This work presents the design, prototyping, and characterization of a hybrid DBC/PCB-based 1.2 kV silicon carbide (SiC) MOSFET full-bridge integrated module building block (IMBB) with ...
Introducing a HfO 2 gate dielectric improves the vertical GaN transistor, boosting its drain current density and its breakdown voltage. The lateral GaN HEMT is without doubt a great success, ...
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