Sponsored by Texas Instruments: Though they still vie for the largest slice of the power-design pie with LDMOS and SiC MOSFETs, GaN devices offer superior specs that may ultimately make them the ...
Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged ...
A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for ...
A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...
Why do GaN and SiC devices need unique test equipment? Power semiconductors employing silicon carbide (SiC) and gallium nitride (GaN) have higher power density, smaller size, better high temperature ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Maintenance and quality assurance are more important than ever in the aerospace industry. Keeping passengers and crews safe requires regular, meticulous ground testing – especially power quality ...
Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a ...
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