Market Outlook, Supply Chain Risk & Technology Trends 2026-2036" explores the growing power module packaging materials market, driven by the rise of SiC and GaN semiconductors and electric vehicles.

The BSM300D12P2E001 is a full SiC power module intended for inverters and converters in solar power conditioners and industrial equipment. The device has a current rating of 300 A making it suitable ...

The "Automotive-Grade Power Semiconductor and Module (SiC, GaN) Industry Research Report, 2025" has been added to ResearchAndMarkets.com's offering. SiC/GaN research indicates a significant uptick in ...

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, extends its leadership in SiC power device technology with the release of the industry’s ...

Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from benchtop to production CHANDLER, Ariz., Aug. 31, 2020 ...

PHOENIX--(BUSINESS WIRE)--ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has introduced a full SiC power module for solar inverter applications, which has been selected by the ...

The AgileSwitch digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from benchtop to production. Microchip Technology announced its ...

Santa Clara, CA and Kyoto, Japan, Oct. 27, 2021 (GLOBE NEWSWIRE) -- Zhenghai Group Co., Ltd. (Zhenghai Group) and ROHM Co., Ltd. (ROHM) have signed a joint venture agreement to establish a new company ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the ...

Cree, Inc. is introducing the industry's first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. When replacing a silicon module with equivalent ...

Research reported in the Japanese Journal of Applied Physics by researchers at Mitsubishi Electric Corporation describes the development of a new power module made from a SiC metal-oxide-semiconductor ...

Both third-generation semiconductor silicon carbide (SiC) power components and silicon-based insulated gate bipolar transistors (Si-based IGBT) are being used in electric vehicles (EV), but the market ...