It’s very difficult to create accurate device-simulation models for advanced CMOS digital processes. Why? Because hard-to-model effects like gate accumulation and tunneling, trap-assisted tunneling, ...
We recently launched a new family of high-performance RF devices for ISM bands at 169, 433, 868, 915, and 955 MHz. The most important design criteria for this new CC1120 sub-1 GHz RF Performance Line ...
RF inductor selection involves these key parameters: mounting (surface mount or through-hole), inductance value, current rating, DC resistance (DCR), self-resonant frequency (SRF), Q factor, and ...
Scattering parameters (S-parameters), which describe the fundamental characteristics of RF networks, come in many flavors, including small signal, large signal, pulsed, cold, and mixed mode. They ...
Signals operating in the radio frequency (RF) realm between 3 kHz to 300 GHz are an inherent part of processing by circuit components within and outside an IC. Linear characteristics of RF circuits ...
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