Toshiba Electronics Europe has added two new 150V N-channel power MOSFET products based upon their latest generation U-MOS X-H Trench process. Credit: Toshiba Electronics Europe The TPH1100CQ5 and ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...
The TPH2R70AR5 is a 100V-rated N-channel power MOSFET Credit: Toshiba Electronics Europe The device has been fabricated with Toshiba’s latest-generation process, known as U-MOS11-H, and the MOSFET is ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today expanded its “U-MOS IX-H Series” of low-voltage N-channel power MOSFETs with new 40V and ...
The RJF0409JSP is a 40 V, 5 A silicon N-channel thermal FET featuring built-in over temperature shut down circuit and high endurance capability against short circuit. It has high-density mounting and ...
The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...
Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...
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