Samsung redesigns HBM4E power delivery, cutting IR drop by 41% and improving reliability for next-generation AI accelerators.

HSINCHU, Sept. 24, 2025 /PRNewswire/ -- M31 Technology Corporation (M31), a leading silicon intellectual property (IP) provider, today announced its latest Ultra-Low Leakage (ULL), Extreme Low Leakage ...

Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...

As high-performance computing (HPC) workloads become increasingly complex, generative artificial intelligence (AI) is being progressively integrated into modern systems, thereby driving the demand for ...

The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with ...