Recent advances in the performance of silicon-based lateral diffused MOS (LDMOS) power transistors have given RF power-amplifier (PA) designers a viable alternative to create competitive solutions for ...
In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
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