A technical paper titled “NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance” was published by researchers at Politecnico di Torino. “NanoSheet-Gate-All-Around-FETs ...
A new technical paper titled “A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors” was published by researchers at National ...
Artificial intelligence/Machine Learning-driven modeling reduces time-to-market for faster Design Technology Co-Optimization development and accelerates model parameter extraction for advanced nodes, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results