New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...
As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.
Tech Xplore on MSN
Redefining GaN power devices for adoption in EVs and data centers
Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...
GaN-based electronics are known for their ability to reduce energy losses and shrink the size of power converters and related ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results