The insulated gate bipolar transistors (IGBTs) combines an easily driven MOS gate and low conduction loss, and is quickly displacing power bipolar transistors as the device of choice for high current ...
Editors Note: The first in a three-part introduction to Linear Feedback Shift Registers (LFSRs), this article is abstracted from the book Bebop to the Boolean Boogie (An Unconventional Guide to ...
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